Title :
Flash X-Ray Testing of ER3400 EAROMS
Author :
Abare, W.E. ; Riley, R.M. ; Thygeson, T.L.
Author_Institution :
Harris Corporation Government Aerospace Systems Division P. O. Box 94000 Melbourne, Fl 32902
Abstract :
Flash X-ray testing of ER3400 MNOS memories demonstrates their memory volatility. Flash X-ray test data is presented for four bias conditions and two write pulse widths. A simple electrical screening technique is described which increases the memory vulnerability threshold. Permanent shifts in access time and memory reference voltage from accumulated doses are discussed.
Keywords :
Aerospace testing; Defense industry; EPROM; Government; Instruments; Logic devices; Manufacturing; Read-write memory; Space vector pulse width modulation; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333124
