Title :
GaAs power MESFET with 41-percent power-added efficiency at 35 GHz
Author :
Kim, B. ; Wurtele, M. ; Shih, H.D. ; Tserng, H.Q.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A GaAs power MESFET has been optimized for Ka-Band operation. The device has an n/sup +/ ledge channel structure with a 0.25- mu m gate on MBE-grown material. An output power density of 0.71 W/mm was achieved with 5.2-dB gain and 34% power-added efficiency. When tuned for maximum efficiency, a power-added efficiency of 41% was obtained with a power density of 0.61 W/mm and a gain of 5.6 dB.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; 0.25 micron; 34 percent; 35 GHz; 41 percent; 5.2 dB; 5.6 dB; GaAs; Ka-Band operation; MBE-grown material; gain; gate length; microwave device; n/sup +/ ledge channel structure; output power density; power MESFET; power-added efficiency; Frequency; Gallium arsenide; MESFETs; Microstrip; Millimeter wave integrated circuits; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Molecular beam epitaxial growth; PHEMTs;
Journal_Title :
Electron Device Letters, IEEE
