A planar-doped 2D-hole gas base AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy

Author

Malik, Roger J. ; Lunardi, Leda M. ; Walker, John F. ; Ryan, Robert W.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

9

Issue

1

fYear

1988

Firstpage

7

Lastpage

9

Abstract

A novel type of AlGaAs/GaAs heterojunction bipolar transistor (HBT) which uses a two-dimensional (2-D) hole gas base formed by planar doping using molecular-beam epitaxy (MBE) has been demonstrated. The base consists of a submonolayer of Be atoms of sheet concentration 0.5-5*10/sup 13/ cm/sup -2/ which is deposited during growth interruption by MBE. The transistor structure exhibits DC current gains up to 700. The effective base transit time is negligible in these transistors and it is postulated that very high-speed nonequilibrium transport may occur in the collector region.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; 2D hole gas base; AlGaAs-GaAs heterojunction bipolar transistor; Be submonolayer; DC current gains; HBT; growth interruption; molecular beam epitaxy; planar doping; very high-speed nonequilibrium transport; Atomic layer deposition; Bipolar transistors; Delay effects; Doping; Electron mobility; FETs; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.20396

Filename

20396