• DocumentCode
    871698
  • Title

    Unusual C-V profiles of Si-implanted

  • Author

    Banerjee, Indrajit ; Chye, Patrick W. ; Gregory, Paul E.

  • Author_Institution
    Avantek Inc., Santa Clara, CA, USA
  • Volume
    9
  • Issue
    1
  • fYear
    1988
  • Firstpage
    10
  • Lastpage
    12
  • Abstract
    The C-V profiles of ion-implanted
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; doping profiles; electron device noise; gallium arsenide; ion implantation; silicon; solid-state microwave devices; substrates; 1 dB; 12 GHz; C-V profiles; GaAs:Si; GaAs:Si substrates; III-V semiconductor; MESFETs; doping profile; ion implantation; low noise figures; nonGaussian characteristics; Capacitance-voltage characteristics; Doping profiles; Electron mobility; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Noise figure; Noise measurement; Shape; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.20397
  • Filename
    20397
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871698