DocumentCode
871708
Title
A Semi-empirical Approach for Heavy Ion SEU Cross Section Calculations
Author
Wrobel, Frédéric ; Hubert, Guillaume ; Iacconi, Philibert
Author_Institution
Univ. de Nice-Sophia Antipolis, Nice
Volume
53
Issue
6
fYear
2006
Firstpage
3271
Lastpage
3276
Abstract
The main goal of this paper is to propose an approach to calculate heavy ion SEU cross sections. The starting point is the diffusion model theory, which allows the charges diffusion but does not account for electrical field in the device. This electrical field is not necessary known in the device and is difficult to be introduced simply in the calculations. For this reason, we have empirically modified the diffusion model to account for electrical field. With only one empirical parameter, our Monte Carlo simulations allow reproducing the Weibull curves obtained for several technologies. In the last section, we focus on sub-threshold events and emphasize that they are partly due to the Rutherford scattering
Keywords
Monte Carlo methods; SRAM chips; diffusion; ion beam effects; semiconductor device models; Monte Carlo simulations; Rutherford scattering; SRAM; Weibull curves; charge diffusion; diffusion model theory; electrical field; heavy ion SEU cross section; semiempirical approach; subthreshold events; Diffusion processes; Neutrons; Scattering; Shape; Single event upset; Diffusion model; Rutherford scattering; Weibull; heavy ion; single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2006.886200
Filename
4033963
Link To Document