• DocumentCode
    871708
  • Title

    A Semi-empirical Approach for Heavy Ion SEU Cross Section Calculations

  • Author

    Wrobel, Frédéric ; Hubert, Guillaume ; Iacconi, Philibert

  • Author_Institution
    Univ. de Nice-Sophia Antipolis, Nice
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3271
  • Lastpage
    3276
  • Abstract
    The main goal of this paper is to propose an approach to calculate heavy ion SEU cross sections. The starting point is the diffusion model theory, which allows the charges diffusion but does not account for electrical field in the device. This electrical field is not necessary known in the device and is difficult to be introduced simply in the calculations. For this reason, we have empirically modified the diffusion model to account for electrical field. With only one empirical parameter, our Monte Carlo simulations allow reproducing the Weibull curves obtained for several technologies. In the last section, we focus on sub-threshold events and emphasize that they are partly due to the Rutherford scattering
  • Keywords
    Monte Carlo methods; SRAM chips; diffusion; ion beam effects; semiconductor device models; Monte Carlo simulations; Rutherford scattering; SRAM; Weibull curves; charge diffusion; diffusion model theory; electrical field; heavy ion SEU cross section; semiempirical approach; subthreshold events; Diffusion processes; Neutrons; Scattering; Shape; Single event upset; Diffusion model; Rutherford scattering; Weibull; heavy ion; single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.886200
  • Filename
    4033963