DocumentCode
871714
Title
The Hardness Assurance Wafer Probe - HAWP
Author
King, E.E. ; Tettemer, G.L. ; Linderman, P.B. ; Micheletti, P.E.
Author_Institution
Northrop Electronics Division 2301 West 120th Street Hawthorne, CA 90250
Volume
30
Issue
6
fYear
1983
Firstpage
4345
Lastpage
4350
Abstract
Complete radiation sensitivity assessments of integrated circuits can now be performed at the wafer level using a new system, the Hardness Assurance Wafer Probe, HAWP. This system utilizes a pulsed Nd: YAG infrared laser impinging on the backside of the wafer to evaluate the transient behavior of the circuits. A low energy X ray source collimated to a single die site actually performs total dose irradiations. Finally, special electrical measurements are used to enable a prediction of the neutron sensitivity of bipolar devices. The HAWP System is described and correlations of wafer probe results to conventional radiation tests for a digital part type are provided.
Keywords
Circuit testing; Collimators; Costs; Electric variables measurement; Optical pulses; Performance evaluation; Probes; Production systems; Semiconductor device testing; System testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1983.4333135
Filename
4333135
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