• DocumentCode
    871714
  • Title

    The Hardness Assurance Wafer Probe - HAWP

  • Author

    King, E.E. ; Tettemer, G.L. ; Linderman, P.B. ; Micheletti, P.E.

  • Author_Institution
    Northrop Electronics Division 2301 West 120th Street Hawthorne, CA 90250
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4345
  • Lastpage
    4350
  • Abstract
    Complete radiation sensitivity assessments of integrated circuits can now be performed at the wafer level using a new system, the Hardness Assurance Wafer Probe, HAWP. This system utilizes a pulsed Nd: YAG infrared laser impinging on the backside of the wafer to evaluate the transient behavior of the circuits. A low energy X ray source collimated to a single die site actually performs total dose irradiations. Finally, special electrical measurements are used to enable a prediction of the neutron sensitivity of bipolar devices. The HAWP System is described and correlations of wafer probe results to conventional radiation tests for a digital part type are provided.
  • Keywords
    Circuit testing; Collimators; Costs; Electric variables measurement; Optical pulses; Performance evaluation; Probes; Production systems; Semiconductor device testing; System testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333135
  • Filename
    4333135