Title :
Amorphous silicon as a resist material
Author :
Gupta, P.K. ; Chopra, K.L.
Author_Institution :
Dept. of Phys., Indian Inst. of Technol., New Delhi, India
Abstract :
Lithographic properties of amorphous silicon films exposed to glow-discharge hydrogen plasma and ion beams have been investigated. The rate of film etching by a CF/sub 4/ plasma is lowered by exposure, giving rise to a negative resist behavior of the material. The sensitivity and contrast are approximately 10/sup 18/ ions/cm/sup 2/ and 1.1, respectively. The effect of exposure time on etching characteristics was also studied.<>
Keywords :
amorphous semiconductors; elemental semiconductors; lithography; resists; semiconductor thin films; silicon; sputter etching; amorphous Si films; amorphous semiconductor; contrast; etching; exposure time; glow discharge H/sub 2/ plasma; ion beams; lithographic properties; negative resist behavior; sensitivity; tetrafluoromethane plasma; Amorphous silicon; Etching; Optical films; Optical sensors; Plasma applications; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Resists;
Journal_Title :
Electron Device Letters, IEEE
