Title :
Corrections to “Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor” [Jul 08 671-673]
Author :
Lin, Yu-Syuan ; Jiang, Jia-jia
Abstract :
In the above titled Letter (ibid., vol 29, no. 7, pp. 671-673), there was an omission in Equation (1). The correct equation is presented here.
Keywords :
Bipolar transistors; Electron devices; Gallium arsenide; Heterojunctions;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2005660
