Title :
Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode
Author :
Cheng, C.H. ; Pan, H.C. ; Huang, C.C. ; Chou, C.P. ; Hsiao, C.N. ; Hu, J. ; Hwang, M. ; Arikado, T. ; McAlister, S.P. ; Chin, Albert
Author_Institution :
Dept. of Mech. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 times 10-6 A/cm2 (at -1 V) at a 28 fF/ mum2 capacitance density.
Keywords :
MIM devices; capacitors; leakage currents; tantalum compounds; titanium compounds; MIM capacitors; TaN electrode; TaN-TiHfO; capacitance density; dual plasma treatment; leakage current; metal-insulator-metal capacitors; Capacitance; Dielectric devices; Electrodes; Leakage current; MIM capacitors; Nitrogen; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; High $kappa$; TiHfO; metal–insulator–metal (MIM); plasma treatment;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000945
