Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode

Author

Cheng, C.H. ; Pan, H.C. ; Huang, C.C. ; Chou, C.P. ; Hsiao, C.N. ; Hu, J. ; Hwang, M. ; Arikado, T. ; McAlister, S.P. ; Chin, Albert

Author_Institution

Dept. of Mech. Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

29

Issue

10

fYear

2008

Firstpage

1105

Lastpage

1107

Abstract

We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 times 10^-6 A/cm² (at -1 V) at a 28 fF/ mum² capacitance density.

Keywords

MIM devices; capacitors; leakage currents; tantalum compounds; titanium compounds; MIM capacitors; TaN electrode; TaN-TiHfO; capacitance density; dual plasma treatment; leakage current; metal-insulator-metal capacitors; Capacitance; Dielectric devices; Electrodes; Leakage current; MIM capacitors; Nitrogen; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; High $kappa$; TiHfO; metal–insulator–metal (MIM); plasma treatment;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000945

Filename

4631441