Direct Measurement of SET Pulse Widths in 0.2- μm SOI Logic Cells Irradiated by Heavy Ions

Author

Yanagawa, Y. ; Hirose, K. ; Saito, H. ; Kobayashi, D. ; Fukuda, S. ; Ishii, S. ; Takahashi, D. ; Yamamoto, K. ; Kuroda, Y.

Author_Institution

Dept. of Electron. Eng., Univ. of Tokyo

Volume

53

Issue

6

fYear

2006

Firstpage

3575

Lastpage

3578

Abstract

Heavy-ion-induced SET-pulse widths in NOR-logic cells fabricated by a 0.2-mum FD-SOI technology are directly measured by using an on-chip self-triggering flip-flop circuit. The pulse widths are distributed from 0.3 to 1.0 ns under a constant LET of 40 MeVmiddot cm ²/mg

Keywords

NOR circuits; field effect logic circuits; flip-flops; integrated circuit measurement; ion beam effects; radiation hardening (electronics); silicon-on-insulator; 0.2 micron; FD-SOI technology; LET; NOR-logic cells; SET pulse width measurement; heavy ion irradiation; on-chip self-triggering flip-flop circuit; silicon-on insulator; single event transient; Aerospace engineering; Circuit testing; Extraterrestrial measurements; Flip-flops; Histograms; Logic circuits; Pulse circuits; Pulse measurements; Silicon on insulator technology; Space vector pulse width modulation; Direct measurement; heavy ion irradiation; silicon on insulator technology; single event transient;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.885110

Filename

4033981