The effect of impact ionization induced bipolar action on n-channel hot-electron degradation

Author

Krieger, Gadi ; Cuevas, Peter P. ; Misheloff, Michael N.

Author_Institution

VLSI Technol. Inc., San Jose, CA, USA

Volume

9

Issue

1

fYear

1988

Firstpage

26

Lastpage

28

Abstract

The relationship between the total impact ionization rate and the measured substrate current is analyzed, using short-channel NMOS devices. It is shown that holes that are injected into the source and turn on the parasitic source-bulk-drain bipolar may actually be a significant portion of the total impact ionization current. The authors explain how the commonly used model, which ignores this bipolar effect, can lead to incorrect predictions regarding hot-electron degradation. A related criterion for maximum source-drain voltage during accelerated stress is discussed and justified.<>

Keywords

hot carriers; impact ionisation; insulated gate field effect transistors; life testing; semiconductor device models; semiconductor device testing; accelerated stress; hole injection; impact ionization induced bipolar action; maximum source-drain voltage; model; n-channel hot-electron degradation; short-channel NMOS devices; substrate current; Acceleration; Current measurement; Degradation; Impact ionization; MOS devices; Predictive models; Stress; Substrate hot electron injection; Switches; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.20402

Filename

20402