DocumentCode
871790
Title
Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materials
Author
Haddara, Hisham ; Elewa, Tarek ; Cristoloveanu, Sorin
Author_Institution
CNRS, Inst. Nat. Polytech. de Grenoble, France
Volume
9
Issue
1
fYear
1988
Firstpage
35
Lastpage
37
Abstract
The dynamic transconductance method is generalized for depletion-mode transistors (DMTs) and used to characterize the interface trapping properties and film doping on silicon-on-insulator (SOI) structures. This method is based on an analytical model of the transconductance for static, dynamic, and high-frequency operation in the linear region.<>
Keywords
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; MOSFET; SOI structures; Si; analytical model; depletion-mode transistors; dynamic transconductance model; film doping; high-frequency operation; interface trapping properties; linear region; static transconductance; Analytical models; Capacitance; Doping; MOSFETs; OFDM modulation; Semiconductor films; Semiconductor process modeling; Silicon on insulator technology; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.20405
Filename
20405
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