Title :
Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materials
Author :
Haddara, Hisham ; Elewa, Tarek ; Cristoloveanu, Sorin
Author_Institution :
CNRS, Inst. Nat. Polytech. de Grenoble, France
Abstract :
The dynamic transconductance method is generalized for depletion-mode transistors (DMTs) and used to characterize the interface trapping properties and film doping on silicon-on-insulator (SOI) structures. This method is based on an analytical model of the transconductance for static, dynamic, and high-frequency operation in the linear region.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; MOSFET; SOI structures; Si; analytical model; depletion-mode transistors; dynamic transconductance model; film doping; high-frequency operation; interface trapping properties; linear region; static transconductance; Analytical models; Capacitance; Doping; MOSFETs; OFDM modulation; Semiconductor films; Semiconductor process modeling; Silicon on insulator technology; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
