Title :
High-performance submicrometer AlInAs-GaInAs HEMT´s
Author :
Mishra, Umesh K. ; Brown, A.S. ; Jelloian, L.M. ; Hackett, L.H. ; Delaney, M.J.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
The performance of long (1.3- mu m) and short (0.3- mu m) gate-length Al/sub 0.48/In/sub 0.52/ As-Ga/sub 0.47/In/sub 0.53/ high-electron-mobility transistors (HEMTs) is reported. Transconductances of 465 and 650 mS/mm, respectively, were achieved. The 0.3- mu m-long gate-length device exhibited an f/sub t/>80 GHz. These results are attributed to the excellent electronic properties of the AlInAs-GaInAs modulation-doped system.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 0.3 micron; 1.3 micron; 465 mS; 650 mS; AlInAs-GaInAs; HEMTs; electronic properties; gate-length; high-electron-mobility transistors; modulation-doped system; transconductance; Electron mobility; Fabrication; HEMTs; Indium phosphide; Lithography; MODFETs; Molecular beam epitaxial growth; Photoluminescence; Sheet materials; Temperature measurement;
Journal_Title :
Electron Device Letters, IEEE
