Title :
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5--SiO2 distributed Bragg reflectors
Author :
Chih-Chiang Kao ; Lu, T.C. ; Huang, H.W. ; Chu, J.T. ; Peng, Y.C. ; Yao, H.H. ; Tsai, J.Y. ; Kao, T.T. ; Kuo, H.C. ; Wang, Stanley C. ; Lin, C.F.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/2006 12:00:00 AM
Abstract :
The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AlN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5--SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 μm. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5×10/sup -2/ and a high characteristic temperature of about 244 K.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; laser beams; optical pumping; semiconductor lasers; silicon compounds; spectral line breadth; spontaneous emission; surface emitting lasers; tantalum compounds; wide band gap semiconductors; 448 nm; AlN-GaN; AlN-GaN distributed Bragg reflectors; GaN; GaN-based vertical-cavity surface-emitting laser; Ta/sub 2/O/sub 5/-SiO/sub 2/; Ta/sub 2/O/sub 5/-SiO/sub 2/ distributed Bragg reflectors; blue wavelength linewidth; laser beam; linear polarization; optical pumping; spontaneous emission coupling efficiency; Distributed Bragg reflectors; Laser beams; Optical polarization; Optical pumping; Optical surface waves; Pump lasers; Spontaneous emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; AlN; GaN; distributed Bragg reflector (DBR); vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.871814
