Title :
Charge Collection in Test Structures
Author :
Campbell, A.B. ; Knudson, A.R. ; Shapiro, P. ; Patterson, D.O. ; Seiberling, L.E.
Author_Institution :
Naval Research Laboratory Washington, D. C. 20375
Abstract :
Charge collection processes have been studied as a function of ion type and incident angle of the impinging ion on silicon diffused junction structures on various epitaxial layer thicknesses.
Keywords :
Charge measurement; Circuits; Current measurement; Laboratories; Preamplifiers; Silicon; Single event upset; Substrates; Testing; Time measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333159
