• DocumentCode
    872028
  • Title

    Green emission from InP-GaP quantum-dot light-emitting diodes

  • Author

    Hatami, F. ; Masselink, W.T. ; Lordi, V. ; Harris, J.S., Jr.

  • Author_Institution
    Dept. of Phys., Humboldt-Univ., Berlin, Germany
  • Volume
    18
  • Issue
    7
  • fYear
    2006
  • fDate
    4/1/2006 12:00:00 AM
  • Firstpage
    895
  • Lastpage
    897
  • Abstract
    The green electroluminescent emission from light-emitting diodes (LEDs) based on the InP-GaP quantum-dot (QD) system is investigated and discussed. The active region of the diode consists of stacked self-assembled Stranski-Krastanow indium phosphide QDs accompanied by thin quantum-well wetting layers (WLs) and embedded in a gallium phosphide matrix. LEDs based on this QD system exhibit both red and green emission. The red electroluminescence at about 720 nm originates from direct-band-gap recombination within the QDs themselves and dominates for low current. The green emission at about 550 nm appears to originate from the WL and dominates for higher current density. The marked difference in current-dependence of the green (WL) and red (QD) emission peaks enables the control of the color of the emitted light through the drive current and, thus, allows a realization of color-tunable LEDs.
  • Keywords
    III-V semiconductors; current density; electroluminescence; electroluminescent devices; gallium compounds; indium compounds; light emitting diodes; self-assembly; semiconductor quantum dots; InP-GaP; InP-GaP quantum-dot light-emitting diodes; LED; current density; direct-band-gap recombination; electroluminescence; quantum-well wetting layers; self-assembled Stranski-Krastanow indium phosphide QD; Electroluminescence; Gallium compounds; Gold; Indium phosphide; Light emitting diodes; Molecular beam epitaxial growth; P-i-n diodes; Quantum dots; Quantum wells; Radiative recombination; Electroluminescence (EL); light-emitting diodes (LEDs); quantum-dot (QD) system devices;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2006.872288
  • Filename
    1608198