Title :
High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime
Author :
Miyazaki, Yasunori ; Yamatoya, Takeshi ; Matsumoto, Keisuke ; Kuramoto, Kyosuke ; Shibata, Kimitaka ; Aoyagi, Toshitaka ; Ishikawa, Takahide
Author_Institution :
High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
4/1/2006 12:00:00 AM
Abstract :
A high-power, ultralow-chirp electroabsorption modulator (EAM) integrated with a distributed-feedback laser diode (EML) having ultrashort lifetime of photogenerated holes in the EAM quantum-well (QW) structure is reported for the first time. A shallow QW structure having a small valence band offset to enhance the sweepout of photogenerated holes was employed as EAM absorption layer. The measured hole lifetimes were 7-11 ps, and the measured frequency chirp (α-parameter) was low or negative at low EAM reverse bias voltages even under high optical output power conditions. Successful 10-Gb/s 80-km normal-dispersion single-mode fiber transmission (chromatic dispersion D=1600 ps/nm) and the record average fiber optical output power (Pf) of +5.3 dBm were achieved at 25°C. In addition, semicooled operation of EML at enhanced bit rates has been demonstrated for application in small-form-factor protocol-agnostic optical transceivers. A 10.7-Gb/s 1600-ps/nm transmission was achieved at 45°C and Pf=+3.0 dBm.
Keywords :
carrier lifetime; chirp modulation; distributed feedback lasers; electro-optical modulation; electroabsorption; high-speed optical techniques; integrated optics; integrated optoelectronics; optical fibre communication; optical fibre dispersion; optical receivers; optical transmitters; quantum well lasers; transceivers; valence bands; 10 Gbit/s; 10.7 Gbit/s; 25 degC; 45 degC; 7 to 11 ps; 80 km; chromatic dispersion; distributed feedback laser; electroabsorption modulator integrated laser; fiber optical output power; frequency chirp; high-power laser; laser diode; normal-dispersion fiber transmission; optical transceivers; photogenerated holes; protocol-agnostic transceivers; quantum well structure; reverse bias voltages; semicooled operation; single-mode fiber transmission; small-form-factor transceivers; ultralow-chirp laser; ultrashort photocarrier lifetime; valence band offset; Absorption; Chirp; Chromatic dispersion; Diode lasers; Frequency measurement; Optical recording; Power generation; Power measurement; Quantum well lasers; Voltage; Chirp; electroabsorption modulator (EAM); laser diode; optical fiber transmission;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.870228
