DocumentCode
872120
Title
Optimization of Diode Structures for Monolithic Integrated Microwave Circuits
Author
Battershall, Barry W. ; Emmons, Stephen P.
Volume
3
Issue
2
fYear
1968
fDate
6/1/1968 12:00:00 AM
Firstpage
107
Lastpage
112
Abstract
Device requirements of a medium power Ku-band reflective phase shifter are reviewed indicating a requirement for a diode with a 4-Terrahertz cut-off frequency. Various structures are examined to test their suitability for integration and feasibility for meeting specifications. A "pocket version" of a surface oriented device design is chosen and described. It is shown to meet or exceed all electrical requirements while providing for compatibility with final integration into the circuit.
Keywords
Diodes; Microwave circuits; Monolithic integrated circuits; Optimization methods; Forward contracts; Frequency; Integrated circuit technology; Microwave circuits; Microwave devices; P-i-n diodes; Phase shifters; Semiconductor diodes; Silicon; Switches;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1968.1049852
Filename
1049852
Link To Document