DocumentCode :
872120
Title :
Optimization of Diode Structures for Monolithic Integrated Microwave Circuits
Author :
Battershall, Barry W. ; Emmons, Stephen P.
Volume :
3
Issue :
2
fYear :
1968
fDate :
6/1/1968 12:00:00 AM
Firstpage :
107
Lastpage :
112
Abstract :
Device requirements of a medium power Ku-band reflective phase shifter are reviewed indicating a requirement for a diode with a 4-Terrahertz cut-off frequency. Various structures are examined to test their suitability for integration and feasibility for meeting specifications. A "pocket version" of a surface oriented device design is chosen and described. It is shown to meet or exceed all electrical requirements while providing for compatibility with final integration into the circuit.
Keywords :
Diodes; Microwave circuits; Monolithic integrated circuits; Optimization methods; Forward contracts; Frequency; Integrated circuit technology; Microwave circuits; Microwave devices; P-i-n diodes; Phase shifters; Semiconductor diodes; Silicon; Switches;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1968.1049852
Filename :
1049852
Link To Document :
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