Title :
Stability of strained quantum-well field-effect transistor structures
Author :
Peercy, Paul S. ; Dodson, B.W. ; Tsao, J.Y. ; Jones, E.D. ; Myers, David R. ; Zipperian, Thomas E. ; Dawson, L.R. ; Biefeld, R.M. ; Klem, J.F. ; Hills, C.R.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
Conditions for stability of strained-layer structures and their implications for device fabrication are examined. Structures which have exhibited the best performance to date are found to be thermodynamically metastable (or at best marginally stable) structures, which will restrict the processing steps permissible in the integration of these devices to form complex circuits.<>
Keywords :
high electron mobility transistors; semiconductor quantum wells; stability; complex ICs; processing steps; quantum-well field-effect transistor structures; stability conditions; strained-layer structures; thermodynamic metastability; Annealing; Capacitive sensors; Circuits; Crystallization; Degradation; FETs; Metastasis; Quantum well devices; Quantum wells; Stability;
Journal_Title :
Electron Device Letters, IEEE
