Title :
Millimeter-Wave Integrated Circuits
Author :
Mao, S. ; Jones, S. ; Vendelin, George D.
fDate :
6/1/1968 12:00:00 AM
Abstract :
Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25- to 100-GHz range. The loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB/ /spl lamda/. Couplers from waveguide to microstrip have been made with transmission losses less than 0.5 dB. Monolithic integrated detectors showed 5-dB better sensitivity than a 1N53 diode in a Philips detector mount. Monolithic diodes delivered 1.5 mW at 28 GHz. The results are encouraging and a fully monolithic integrated receiver is under development.
Keywords :
Gallium materials/devices; Microstrip circuits; Microwave circuits; Millimeter-wave FET integrated circuits; Monolithic integrated circuits; Ceramics; Circuit testing; Detectors; Diodes; Distributed parameter circuits; Frequency; Gallium arsenide; Microstrip; Millimeter wave integrated circuits; Millimeter wave technology;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1968.1049854