Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs

Author

Kuang, J.B. ; Tasker, P.J. ; Wang, G.W. ; Chen, Y.K. ; Eastman, L.F. ; Aina, O.A. ; Hier, H. ; Fathimulla, A.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

9

Issue

12

fYear

1988

Firstpage

630

Lastpage

632

Abstract

The authors report the influence of the kink effect on the DC and microwave performance of i-InAlAs heterojunction doped-channel MESFETs lattice matched to an InP substrate with submicrometer gates. Kink effects were observed at room temperature as well as at 77 K in the DC measurement. The kinks seem to be related to deep-level electron trapping, and are not present at microwave frequencies. Measured results are presented showing that the existence of kinks at low operating frequencies does not seem to degrade the microwave performance of the devices.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; deep levels; gallium arsenide; indium compounds; semiconductor device testing; solid-state microwave devices; 295 K; 77 K; DC performance; InAlAs-InGaAs-InAlAs; InP substrate; MBE growth; deep-level electron trapping; heterojunction doped-channel MESFETs; kink effect; microwave performance; submicrometre gate; Electron traps; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MESFETs; Microwave frequencies; Microwave measurements; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.20418

Filename

20418