A new p-channel MOSFET with large-tilt-angle implanted punchthrough stopper (LATIPS)

Author

Hori, Takashi ; Kurimoto, Kazumi

Author_Institution

Matsushita Electr. Ind. Co., Ltd., Osaka, Japan

Volume

9

Issue

12

fYear

1988

Firstpage

641

Lastpage

643

Abstract

A buried-channel p-MOSFET with a large-tile-angle implanted punchthrough stopper (LATIPS) is described. In this device the n/sup +/ LATIPS region was successfully realized adjacent to the p/sup +/ source/drain, even without a sidewall spacer, by taking advantage of the n/sup +/ large-tilt-angle implant. In spite of the relatively deep p/sup +/ junction of 0.2- mu m depth and the low n-well concentration of 1*10/sup 16/ cm/sup -3/, the 0.5- mu m LATIPS device (with corresponding channel length of 0.3 mu m) achieved high punchthrough resistance, e.g. a low subthreshold swing of 95 mV/decade with a high transconductance of 135 mS/mm.<>

Keywords

insulated gate field effect transistors; ion implantation; 0.3 micron; 0.5 micron; 135 mS; LATIPS; buried-channel p-MOSFET; channel length; deep p/sup +/ junction; large-tilt-angle implanted punchthrough stopper; low n-well concentration; p/sup +/ source/drain; punchthrough resistance; subthreshold swing; transconductance; Capacitance; Doping; Etching; FETs; Fabrication; Immune system; Implants; MOSFET circuits; Transconductance; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.20422

Filename

20422