Title :
Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
Author :
Mishra, Umesh K. ; Brown, A.S. ; Rosenbaum, E. ; Hooper, C.E. ; Pierce, M.W. ; Delaney, M.J. ; Vaughn, S. ; White, K.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
The millimeter-wave performance is reported for Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As high-electron-mobility transistors (HEMTs) with 0.2- mu m and 0.1- mu m-long gates on material grown by molecular-beam epitaxy on semi-insulating InP substrates. Devices of 50- mu m width exhibited extrinsic transconductances of 800 and 1080 mS/mm, respectively. External f/sub T/ (maximum frequency of oscillation) of 120 and 135 GHz, respectively, were measured. A maximum f/sub T/ of 170 GHz was obtained from a 0.1*200- mu m/sup 2/ device. A minimum noise figure of 0.8 dB and associated gain of 8.7 dB were obtained from a single-stage amplifier at frequencies near 63 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 0.2 micron; 0.8 dB; 1080 mS; 120 GHz; 135 GHz; 170 GHz; 63 GHz; 8.7 dB; 800 mS; AlInAs-GaInAs; HEMTs; InP substrates; extrinsic transconductances; gain; gate length; maximum frequency of oscillation; microwave performance; millimeter-wave performance; molecular-beam epitaxy; noise figure; single-stage amplifier; Buffer layers; Epitaxial layers; Fabrication; Gain; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Microwave devices; Noise figure;
Journal_Title :
Electron Device Letters, IEEE
