DocumentCode
872253
Title
Influence of interface states on the capacitance of homo- and heterojunctions
Author
Van de Wiele, F. ; Van Overstraeten, R.
Author_Institution
Catholic University of Louvain, Electronic Research Laboratories, Section Solid State Electronics, Heverlee, Belgium
Volume
3
Issue
5
fYear
1967
fDate
5/1/1967 12:00:00 AM
Firstpage
218
Lastpage
220
Abstract
The difference between the calculated and the measured built-in voltage for homo- and heterojunctions is explained by introducing interface states in the vicinity of the metallurgical junction. A general formula is derived for the depletion-layer capacitance of abrupt junctions with interface states.
Keywords
p-n junctions; semiconductor junctions; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670168
Filename
4207225
Link To Document