Bias dependence of f/sub T/ and f/sub max/ in an In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub 0.53/Ga/sub 0.47/As MISFET

Author

Del Alamo, Jesus A. ; Mizutani, Takashi

Author_Institution

MIT, Cambridge, MA, USA

Volume

9

Issue

12

fYear

1988

Firstpage

654

Lastpage

656

Abstract

Detailed microwave characterization of a recently fabricated In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub 0.53/Ga/sub 0.47/As MISFET reveals that high values of current-gain cutoff frequency (f/sub T/) and unilateral-gain cutoff frequency (f/sub max/) are obtained for a broad range of gate bias voltage values. A significant peak in f/sub T/ and f/sub max/ has also been observed at high gate-source bias values. The peak coincides with the onset of electron accumulation at the heterointerface and is attributed to reduced ionized impurity scattering coupled with reduced drain conductance. This result suggests an improved device structure that optimizes operation in the accumulation regime.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; solid-state microwave devices; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As; MISFET; current-gain cutoff frequency; drain conductance; electron accumulation; gate bias voltage; heterointerface; high gate-source bias; ionized impurity scattering; microwave characterization; unilateral-gain cutoff frequency; Cutoff frequency; Electrons; HEMTs; Indium compounds; Insulation; Large scale integration; MISFETs; MODFETs; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.20426

Filename

20426