DocumentCode
872304
Title
Direct current-voltage characteristics of transistors in the avalanche region
Author
Spirito, P.
Volume
3
Issue
2
fYear
1968
fDate
6/1/1968 12:00:00 AM
Firstpage
194
Lastpage
195
Abstract
A graphical method is proposed for plotting the transistor avalanche characteristics, approximating the actual behavior of the base-emitter junction by means of the common base input characteristic. Experimental results for a typical avalanche transistor are reported.
Keywords
Avalanche; Transistors; Bismuth; Current measurement; Current-voltage characteristics; Diodes; Equations; Germanium; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1968.1049869
Filename
1049869
Link To Document