DocumentCode
872559
Title
Behaviour of n-type gallium arsenide in strong microwave fields
Author
Acket, G.O. ; Lam, Ha T.
Author_Institution
Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
Volume
3
Issue
6
fYear
1967
fDate
6/1/1967 12:00:00 AM
Firstpage
258
Lastpage
259
Abstract
Results are presented concerning the change of attenuation and generation of harmonics in n-type gallium arsenide, subjected to a strong microwave electric field.
Keywords
III-V semiconductors; electromagnetic waves; gallium arsenide;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670200
Filename
4207255
Link To Document