مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

872562

Title :

Indium antimonide thin-film transistor

Author :

Frantz, V.L.

Volume :

Issue :

fYear :

1965

fDate :

7/1/1965 12:00:00 AM

Firstpage :

760

Lastpage :

760

Keywords :

Aluminum; Cadmium compounds; Electrodes; Gold; Indium; Plasma temperature; Semiconductor films; Tellurium; Tensile stress; Thin film transistors;

fLanguage :

English

Journal_Title :

Proceedings of the IEEE

Publisher :

ieee

ISSN :

0018-9219

Type :

jour

DOI :

10.1109/PROC.1965.4037

Filename :

1445967

Link To Document :