DocumentCode
872673
Title
Modeling and simulation of insulated-gate field-effect transistor switching circuits
Author
Shichman, Harold ; Hodges, David A.
Volume
3
Issue
3
fYear
1968
fDate
9/1/1968 12:00:00 AM
Firstpage
285
Lastpage
289
Abstract
A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described. This device model is particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits. The results of computer simulations using the new equivalent circuit are in close agreement with experimental observations. As an example of a practical application, simulation results are shown for an integrated circuit IGFET memory cell.
Keywords
Computer-aided circuit analysis; computer-aided circuit analysis; Application software; Application specific integrated circuits; Circuit simulation; Computational modeling; Computer aided analysis; Computer simulation; Equivalent circuits; FETs; Insulation; Switching circuits;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1968.1049902
Filename
1049902
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