Title :
Electron-beam vapour-deposited erbium-doped glass waveguide laser at 1.53 mu m
Author :
Nakazawa, Masataka ; Kimura, Yuichi
Author_Institution :
R&D Centre, NTT Telecommun. Field Syst., Ibaraki, Japan
Abstract :
A single-transverse-mode erbium-doped glass waveguide laser operating at a wavelength of g 1.53 mu m is described. The erbium-doped GeO2-SiO2 core of the waveguide was made by electron-beam vapour deposition and patterned by reactive ion etching on a quartz glass substrate. The core was 10 mu m wide, 8 mu m high and 64.5 mm long, which permitted single-transverse-mode laser oscillation. The threshold pump power for CW oscillation was 150 approximately 200 mW at a pumping wavelength of 0.98 mu m.
Keywords :
electron beam deposition; erbium; integrated optics; optical waveguides; optical workshop techniques; solid lasers; sputter etching; 1.53 micron; 150 to 200 mW; CW oscillation; Er doped glass waveguide laser; GeO 2-SiO 2:Er; SiO 2; electron-beam vapour deposition; quartz glass substrate; reactive ion etching; single transverse mode laser; threshold pump power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921316
