Title :
FDFD Nonconformal Domain Decomposition Method for the Electromagnetic Modeling of Interconnections in Silicon Interposer
Author :
Biancun Xie ; Swaminathan, Madhavan ; Ki Jin Han
Author_Institution :
Interconnect & Packaging Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper proposes an efficient method to model interconnections with through-silicon vias (TSVs) in silicon interposer for 3-D systems. The proposed method uses 3-D finite-difference frequency-domain nonconformal domain decomposition method to model the redistribution layer transmission lines on lossy silicon interposer. Using the nonconformal domain decomposition approach, the interposer can be divided into separate subdomains. Individual subdomains can be discretized independently based on its feature size. Field continuity at interfaces between domains is enforced by introducing Lagrange multiplier and vector basis functions at the interfaces. TSVs are modeled using an integral-equation-based solver, which uses cylindrical modal basis functions. The formulation on incorporating multiport network into nonconformal domain decomposition is presented to include the parasitic effects of TSV arrays into the system matrix. By comparing with 3-D full-wave simulations and commercial solvers, this paper validates the accuracy and efficiency of the proposed modeling approach.
Keywords :
electromagnetic compatibility; elemental semiconductors; finite difference methods; frequency-domain analysis; integral equations; integrated circuit interconnections; integrated circuit modelling; matrix decomposition; silicon; three-dimensional integrated circuits; 3D finite-difference frequency-domain nonconformal domain decomposition method; 3D full-wave simulations; 3D systems; FDFD nonconformal domain decomposition method; Lagrange multiplier; Si; TSV arrays; cylindrical modal basis functions; electromagnetic modeling; field continuity; integral-equation-based solver; lossy silicon interposer interconnections; multiport network; redistribution layer transmission lines; system matrix; through-silicon vias; vector basis functions; Equations; Integrated circuit interconnections; Mathematical model; Ports (Computers); Silicon; Through-silicon vias; Vectors; Domain decomposition; multiport network; redistribution layer (RDL); silicon interposer; susceptance element equivalent circuit (SEEC); through-silicon via (TSV);
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.2015.2405014