Title :
Distributed channel model for HEMT signal and noise parameters
Author :
Gardner, Peter ; Paul, D.K.
Author_Institution :
Univ. of Manchester Inst. of Sci. & Technol., UK
Abstract :
A new simple model for the signal and noise properties of a microwave FET or HEMT avoids the need for any explicit correlation between gate and drain noise sources by distributing the drain-to-gate capacitance and the drain noise source along the conducting channel. The new model applied to a commercial HEMT chip demonstrates a very good fit to measured scattering and noise parameter data.
Keywords :
S-parameters; equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; solid-state microwave devices; HEMT; conducting channel; distributed channel model; drain noise source; drain-to-gate capacitance; gate noise source; microwave FET; noise parameters; signal parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921322
