P-well bias dependence of electron trapping in gate oxide of n-MOSFETs during substrate hot-electron injection

The substrate hot-electron injection technique has been utilised to study electron trapping in the gate oxide of n-MOS transistors. Contrary to work described elsewhere, the trapped charge density depends on the bias applied to the p-well/n-substrate junction used to inject the electrons. It is probable, therefore, that electron energy at the Si-SiO₂ interface has a significant effect on charge trapping and detrapping.