Title :
Noise-parameter measurements of microwave transistors up to 2.4 GHz
Author :
B¿¿chtold, W. ; Strutt, M.J.O.
Author_Institution :
Swiss Federal Institute of Technology, Department of Advanced Electrical Engineering, Zurich, Switzerland
fDate :
7/1/1967 12:00:00 AM
Abstract :
Noise and gain measurements of microwave transistors in the frequency region 0.6¿2.4 GHz have been carried out. The results, the optimum noise figure and the optimum source admittance as a function of frequency, as well as the optimum gain, noise figure and noise measure as a function of source admittance and collector current are discussed.
Keywords :
gain measurement; noise measurement; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670247
