• DocumentCode
    87320
  • Title

    A High Density 250 ^{\\circ}{\\rm C} Junction Temperature SiC Power Module Development

  • Author

    Puqi Ning ; Fei Wang ; Di Zhang

  • Author_Institution
    Inst. of Electr. Eng., Beijing, China
  • Volume
    2
  • Issue
    3
  • fYear
    2014
  • fDate
    Sept. 2014
  • Firstpage
    415
  • Lastpage
    424
  • Abstract
    A high temperature wirebond-packaged phase-leg power module was designed, developed, and tested. Details of the layout, gate drive, and cooling system designs are described. Continuous power tests confirmed that the designed high-density power module can be successfully operated with 250 °C junction temperature. The power module was further utilized in an all-SiC rectifier system that achieves a 2.78 kW/lb power density.
  • Keywords
    integrated circuit design; power integrated circuits; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; high temperature wirebond-packaged; junction temperature; phase-leg power module; temperature 250 degC; Cooling; Layout; Logic gates; Multichip modules; Silicon; Silicon carbide; Switches; High-temperature techniques; Semiconductor device packaging; semiconductor device packaging; silicon carbide;
  • fLanguage
    English
  • Journal_Title
    Emerging and Selected Topics in Power Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2168-6777
  • Type

    jour

  • DOI
    10.1109/JESTPE.2013.2290054
  • Filename
    6658832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=87320