Numerical solution of the steady-state electric properties of transistors

The basic differential equations governing one-dimensional steady-state current flow in semiconductors are transformed for numerical solution on a digital computer. The variation, as a function of distance, of the hole and electron densities, and of the electric field right through a transistor, have been computed for a wide range of current levels. No simplifying assumptions regarding space-charge neutrality or the properties of transition regions have been made. The variation of the diffusion coefficients with doping and electric field have been taken into account.