Conditions for space-charge reversal at thermionic heterojunctions designed for ballistic electron injection

Author

Al-Omar, A. ; Krusius, J. Peter

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

9

Issue

2

fYear

1988

Firstpage

81

Lastpage

83

Abstract

Semiconductor heterojunctions (HJs) have been used as injectors for ballistic electrons in high-speed devices. It was found that the charge state of the HJ has a significant influence on the ballistic-electron-injection process. The Al/sub x/FGa/sub 1-x/As/GaAs HJ was used as the demonstration system. A self-consistent ensemble Monte-Carlo formulation has been used in the quantitative calculations and simple model as an intuitive explanation. The state of the narrow-gap semiconductor can be changed from accumulation to depletion with one or several of the following: applied voltage, temperature, of Al mole fraction. The ballistic-electron fraction can vary by a factor of 3 depending on this space charge.<>

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high field effects; semiconductor junctions; space charge; Al mole fraction; Al/sub x/Ga/sub 1-x/As-GaAs; III-V semiconductor; accumulation; ballistic electron injection; depletion; ensemble Monte-Carlo formulation; high-speed devices; model; narrow-gap semiconductor; space-charge reversal; thermionic heterojunctions; Artificial intelligence; Cathodes; Distribution functions; Electrons; Gallium arsenide; Heterojunctions; Reflection; Space charge; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.2047

Filename

2047