Title :
Gallium phosphide epitaxial layers with high mobility
Author :
Nicklin, R. ; Russell, A.W. ; Newman, P.C.
Author_Institution :
Plessey Co. Limited., Allen Clark Research Centre, Towcester, UK
fDate :
8/1/1967 12:00:00 AM
Abstract :
Measurements on epitaxial layers of GaP, containing negligible amounts of GaAs, have yielded mobilities up to 200cm2/Vs at room temperature, and a peak value of 1480cm2/Vs. The residual impurity appears to be Si.
Keywords :
films; gallium compounds; semiconductor materials; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670279
