Title :
A Variational Approach to the Two-Dimensional Nonlinear Poisson´s Equation for the Modeling of Tunneling Transistors
Author :
Shen, Chen ; Ong, Sern-Long ; Heng, Chun-Huat ; Samudra, Ganesh ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
In this letter, we report a new approach to treat the 2-D nonlinear Poisson´s equation in the context of MOS devices and discuss its application in the modeling of tunneling field-effect transistors (T-FET). It is revealed that the narrowing of tunneling barrier in T-FET has different mechanisms before and after inversion layer is formed. Closed-form equation is obtained to describe the barrier narrowing in the presence of inversion layer.
Keywords :
MOSFET; Poisson equation; semiconductor device models; variational techniques; MOS devices; inversion layer; semiconductor device modeling; tunneling barrier; tunneling field-effect transistors; two-dimensional nonlinear Poisson equation; variational approach; Semiconductor device modeling; tunnel transistors; variational methods;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2005517
