Hall generator with variable active-layer thickness

The principle of operation of a new semiconductor device, a Hall generator with a variable-thickness active layer, is discussed. Such a device results from the location of a p-n junction in close proximity to the surface of a semiconductor plate, thus isolating the thin active layer of the Hall generator from the base. Two additional electrodes, one on the base and one on the active layer of the Hall generator, allow variation of space-charge location on the p-njunction by means of reverse biasing. Initial results on experimental units are also given.