DocumentCode
873460
Title
Technology and performance of integrated complementary MOS circuits
Author
Klein, Thomas
Volume
4
Issue
3
fYear
1969
fDate
6/1/1969 12:00:00 AM
Firstpage
122
Lastpage
130
Abstract
The desirable characteristics of complementary MOS circuits are low standby power consumption, high speed, and high noise immunity. These require close control and matching of n- and p-channel transistor characteristics. Acceptable limits for mismatch between devices were derived based on circuit considerations and were related to process variables. Predicted performances were achieved using test circuits; feasibility of the technology has been shown. The reliability of fabricated test structures was evaluated.
Keywords
Integrated circuits; Transistors; integrated circuits; transistors; Capacitance; Circuit testing; Energy consumption; Integrated circuit noise; Integrated circuit technology; Inverters; Leakage current; MOSFETs; Semiconductor device noise; Turning;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1969.1049974
Filename
1049974
Link To Document