Title :
Technology and performance of integrated complementary MOS circuits
fDate :
6/1/1969 12:00:00 AM
Abstract :
The desirable characteristics of complementary MOS circuits are low standby power consumption, high speed, and high noise immunity. These require close control and matching of n- and p-channel transistor characteristics. Acceptable limits for mismatch between devices were derived based on circuit considerations and were related to process variables. Predicted performances were achieved using test circuits; feasibility of the technology has been shown. The reliability of fabricated test structures was evaluated.
Keywords :
Integrated circuits; Transistors; integrated circuits; transistors; Capacitance; Circuit testing; Energy consumption; Integrated circuit noise; Integrated circuit technology; Inverters; Leakage current; MOSFETs; Semiconductor device noise; Turning;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1969.1049974
