Title :
Low Distortion 50 GSamples/s Track-Hold and Sample-Hold Amplifiers
Author :
Daneshgar, Saeid ; Griffith, Zach ; Seo, Munkyo ; Rodwell, Mark J. W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
We report 50 GSamples/s track-hold amplifier (THA) and sample-hold amplifier (SHA) designed and fabricated in a 250 nm InP double heterojunction bipolar transistor (DHBT) technology. Because the base-emitter junction reverse breakdown voltage is low in the process technology employed, the circuits use a base-collector junction diode as the switching element in the signal path. Operating with -5 V and -2.5 V supplies, the THA achieves > +16 dBm input-referred third-order intercept (IIP3) at signal frequencies below 22 GHz, while the SHA achieves IIP3 > +17 dBm for 2-22 GHz inputs.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; microwave amplifiers; sample and hold circuits; DHBT; InP; SHA; THA; base-collector junction diode; base-emitter junction reverse breakdown voltage; double heterojunction bipolar transistor; frequency 2 GHz to 22 GHz; sample-hold amplifiers; size 250 nm; third-order intercept; track-hold amplifiers; voltage -2.5 V; voltage -5 V; DH-HEMTs; Indium phosphide; Junctions; Nonlinear distortion; Schottky diodes; Switches; Analog-to-digital converter (ADC); InP technology; nonlinearity analysis; sample-hold amplifier (SHA); track-hold amplifier (THA);
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2014.2329843
