Cryogenic capacitive transimpedance amplifier for astronomical infrared detectors

Author

Nagata, H. ; Shibai, H. ; Hirao, T. ; Watabe, T. ; Noda, M. ; Hibi, Y. ; Kawada, M. ; Nakagawa, T.

Author_Institution

Adv. Technol. Center, Nat. Astron. Obs. of Japan, Tokyo, Japan

Volume

51

Issue

2

fYear

2004

Firstpage

270

Lastpage

278

Abstract

We have developed a new capacitive transimpedance amplifier (CTIA) that can be operated at 2 K, and have good performance as readout circuits of astronomical far-infrared array detectors. The circuit design of the present CTIA consists of silicon p-MOSFETs and other passive elements. The process is a standard Bi-CMOS process with 0.5 μm design rule. The open-loop gain of the CTIA is more than 300, resulting in good integration performance. The output voltage swing of the CTIA was 270 mV. The power consumption for each CTIA is less than 10 μW. The noise at the output showed a 1/f noise spectrum of 4 μV/√Hz at 1 Hz. The performance of this CTIA nearly fulfills the requirements for the far-infrared array detectors onboard ASTRO-F, Japanese infrared astronomical satellite to be launched in 2005.

Keywords

BiCMOS integrated circuits; astronomical instruments; infrared astronomy; infrared detectors; low-power electronics; operational amplifiers; 0.5 μm design; 1 Hz; 10 muW; ASTRO-F; Bi-CMOS process; CTIA; Japanese infrared astronomical satellite; astronomical far-infrared array detectors; astronomical infrared detectors; circuit design; cryogenic capacitive transimpedance amplifier; integration performance; noise spectrum; open-loop gain; output voltage swing; passive elements; power consumption; readout circuits; silicon p-MOSFET; Circuit synthesis; Cryogenics; Energy consumption; Infrared detectors; Infrared spectra; MOSFET circuits; Performance gain; Sensor arrays; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.821764

Filename

1262657