Dynamic modeling of a magnetic system constructed with giant magnetostrictive thin film using element-free galerkin method

Author

Yang, Qingxin ; Chen, Haiyan ; Liu, Suzhen ; Yang, Wenrong ; Fan, Changzai ; Yan, Weili ; Liu, Shuo

Author_Institution

Joint Key Lab. of Electromagn. Field & Electr. Apparatus Reliability, Hebei Inst. of Technol., Tianjin

Volume

42

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

939

Lastpage

942

Abstract

A dynamic model of electromagnetic devices constructed with magnetostrictive thin film is developed to study the dynamic characteristics of the system. In the developed model, the inductance is considered as current and geometry dependent so as to represent the magneto-elastic property of the magnetostrictive thin film. Such an inductance is obtained from coupled magnetoelastic field solutions. Element-free Galerkin method (EFGM) is adopted in numerical field analysis so as to describe the magnetostrictive thin film; the DeltaE effect is considered to improve the material property modeling. The developed simulation model is examined through comparing the simulated current-voltage characteristic with the measured one

Keywords

Galerkin method; giant magnetoresistance; inductance; magnetic thin films; magnetoelastic effects; magnetostrictive devices; current-voltage characteristic; dynamic characteristics; dynamic model; electromagnetic devices; element-free Galerkin method; giant magnetostrictive thin film; magnetic system; magneto-elastic property; magnetoelastic field solutions; material property model; Electromagnetic devices; Electromagnetic modeling; Inductance; Magnetic devices; Magnetic films; Magnetostriction; Magnetostrictive devices; Moment methods; Thin film devices; Transistors; Dynamic model; element-free Galerkin method (EFGM); magneto-elastic coupling; magnetostrictive thin film;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.871669

Filename

1608362