Demonstration of a p-channel GaAs/AlGaAs BICFET

Author

Taylor, Geoffrey W. ; Lebby, M.S. ; Izabelle, A. ; Tell, B. ; Brown-Goebeler, K. ; Chang, Tao-yuan ; Simmons, J.G.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

9

Issue

2

fYear

1988

Firstpage

84

Lastpage

86

Abstract

The p-channel bipolar inversion-channel field-effect transistor (BICFET) is a bipolar transistor which utilizes an inversion layer induced by planar doping using molecular beam epitaxy. A current gain of approximately 8 is obtained at a current density of approximately 8*10/sup 3/ A/cm/sup 2/. The results agree well with previous theoretical predictions of current gain, output conductance, and collector offset voltage. There is no base transit time in the BICFET and thus the speed of the device will be determined by transit-time-limited transport in the collector.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; inversion layers; BICFET; GaAs-AlGaAs; bipolar transistor; collector offset voltage; current gain; inversion layer; molecular beam epitaxy; output conductance; p-channel bipolar inversion-channel field-effect transistor; planar doping; transit-time-limited transport; Bipolar transistors; Current density; Doping; Electron emission; FETs; Gallium arsenide; Heterojunctions; Molecular beam epitaxial growth; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.2048

Filename

2048