Title :
Demonstration of a p-channel GaAs/AlGaAs BICFET
Author :
Taylor, Geoffrey W. ; Lebby, M.S. ; Izabelle, A. ; Tell, B. ; Brown-Goebeler, K. ; Chang, Tao-yuan ; Simmons, J.G.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
The p-channel bipolar inversion-channel field-effect transistor (BICFET) is a bipolar transistor which utilizes an inversion layer induced by planar doping using molecular beam epitaxy. A current gain of approximately 8 is obtained at a current density of approximately 8*10/sup 3/ A/cm/sup 2/. The results agree well with previous theoretical predictions of current gain, output conductance, and collector offset voltage. There is no base transit time in the BICFET and thus the speed of the device will be determined by transit-time-limited transport in the collector.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; inversion layers; BICFET; GaAs-AlGaAs; bipolar transistor; collector offset voltage; current gain; inversion layer; molecular beam epitaxy; output conductance; p-channel bipolar inversion-channel field-effect transistor; planar doping; transit-time-limited transport; Bipolar transistors; Current density; Doping; Electron emission; FETs; Gallium arsenide; Heterojunctions; Molecular beam epitaxial growth; Voltage;
Journal_Title :
Electron Device Letters, IEEE
