DocumentCode
873995
Title
Redundancy in LSI memory array
Author
Chen, Aaron
Volume
4
Issue
5
fYear
1969
fDate
10/1/1969 12:00:00 AM
Firstpage
291
Lastpage
293
Abstract
The probability of array yield for a large-scale integrated memory array is considered. The calculation assumes the random distribution of defective cells and the discretionary wiring of good rows and columns. Under the above conditions, the calculation shows that the most efficient use of redundancy is to have more row or column redundancy along the longer dimension of the array.
Keywords
Digital storage; Large scale integration; Redundancy; Semiconductor storage devices; digital storage; large scale integration; redundancy; semiconductor storage devices; Circuit testing; Control systems; Costs; Digital systems; Flip-flops; Large scale integration; Pulsed power supplies; Redundancy; Resistors; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1969.1050019
Filename
1050019
Link To Document