• DocumentCode
    873995
  • Title

    Redundancy in LSI memory array

  • Author

    Chen, Aaron

  • Volume
    4
  • Issue
    5
  • fYear
    1969
  • fDate
    10/1/1969 12:00:00 AM
  • Firstpage
    291
  • Lastpage
    293
  • Abstract
    The probability of array yield for a large-scale integrated memory array is considered. The calculation assumes the random distribution of defective cells and the discretionary wiring of good rows and columns. Under the above conditions, the calculation shows that the most efficient use of redundancy is to have more row or column redundancy along the longer dimension of the array.
  • Keywords
    Digital storage; Large scale integration; Redundancy; Semiconductor storage devices; digital storage; large scale integration; redundancy; semiconductor storage devices; Circuit testing; Control systems; Costs; Digital systems; Flip-flops; Large scale integration; Pulsed power supplies; Redundancy; Resistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1969.1050019
  • Filename
    1050019