DocumentCode :
873995
Title :
Redundancy in LSI memory array
Author :
Chen, Aaron
Volume :
4
Issue :
5
fYear :
1969
fDate :
10/1/1969 12:00:00 AM
Firstpage :
291
Lastpage :
293
Abstract :
The probability of array yield for a large-scale integrated memory array is considered. The calculation assumes the random distribution of defective cells and the discretionary wiring of good rows and columns. Under the above conditions, the calculation shows that the most efficient use of redundancy is to have more row or column redundancy along the longer dimension of the array.
Keywords :
Digital storage; Large scale integration; Redundancy; Semiconductor storage devices; digital storage; large scale integration; redundancy; semiconductor storage devices; Circuit testing; Control systems; Costs; Digital systems; Flip-flops; Large scale integration; Pulsed power supplies; Redundancy; Resistors; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1969.1050019
Filename :
1050019
Link To Document :
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