DocumentCode :
874147
Title :
Series operation of Gunn diodes for high r.f. power
Author :
Carroll, J.E.
Volume :
3
Issue :
10
fYear :
1967
fDate :
10/1/1967 12:00:00 AM
Firstpage :
455
Lastpage :
456
Abstract :
Several GaAs Gunn diodes have been made to operate at a single frequency simultaneously in series operation. This, as explained, is an unexpected result and enables the impedance level of these semiconductor devices to be raised and the power level to be increased. This can have important consequences for ultrahigh-power generation.
Keywords :
Gunn effect; semiconductor diodes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19670360
Filename :
4207415
Link To Document :
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