DocumentCode
874147
Title
Series operation of Gunn diodes for high r.f. power
Author
Carroll, J.E.
Volume
3
Issue
10
fYear
1967
fDate
10/1/1967 12:00:00 AM
Firstpage
455
Lastpage
456
Abstract
Several GaAs Gunn diodes have been made to operate at a single frequency simultaneously in series operation. This, as explained, is an unexpected result and enables the impedance level of these semiconductor devices to be raised and the power level to be increased. This can have important consequences for ultrahigh-power generation.
Keywords
Gunn effect; semiconductor diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670360
Filename
4207415
Link To Document