Title :
High-Efficiency Subharmonic Oscillations from Silicon Diodes at Frequencies up to 6 GHz
Author :
Ying, Robert S. ; Mankarious, Ramzy G. ; Bower, Robert W.
fDate :
12/1/1969 12:00:00 AM
Abstract :
Pulsed operation of Si avalanche diodes in an oscillator circuit has produced efficiencies exceeding 45 percent at frequencies of 2.0 to 3.0 GHz, and 17 percent at 6.4 GHz. The device has a lightly punched-through structure working in a coaxial cavity, which can support both the fundamental IMPATT and its subharmonic frequencies.
Keywords :
Microwave oscillators; Oscillators; Diodes; Electron devices; Frequency; Germanium; L-band; Microwave devices; Resonance; Silicon devices; Solid state circuits; Substrates;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1969.1050042
