DocumentCode :
874612
Title :
Application of nanojunction-based RRAM to reconfigurable IC
Author :
Liu, Minggang ; Wang, W.
Author_Institution :
Inst. of Microelectron., Key Lab. of Nanofabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing
Volume :
3
Issue :
3
fYear :
2008
fDate :
9/1/2008 12:00:00 AM
Firstpage :
101
Lastpage :
105
Abstract :
A novel reconfigurable architecture, rFPGA, is developed by utilising high-density resistive memory (RRAM) circuits as FPGA components. Different from the existing CMOS-nano hybrid FPGAs that use crossbars, the rFPGA mainly consists of 1T1R RRAM structures (one CMOS transistor is integrated with a two-terminal resistive nanojunction) that can be fabricated using an efficient CMOS-compatible process. These 1T1R structures can significantly improve the FPGA memory and routing circuits, and enable the rFPGA to achieve at least a 2times density enhancement along with a 10times reduction of delay and power, compared with the corresponding CMOS FPGA.
Keywords :
field programmable gate arrays; integrated optoelectronics; random-access storage; reconfigurable architectures; 1T1R RRAM structures; CMOS transistor; field programmable array; high-density resistive memory circuits; nanojunction-based RRAM; reconfigurable integrated circuit; two-terminal resistive nanojunction;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl:20080029
Filename :
4634718
Link To Document :
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