DocumentCode
874727
Title
Ultralinear transistor configuration under conditions of minimal power-supply drain current
Author
Blessser, B.
Volume
5
Issue
3
fYear
1970
fDate
6/1/1970 12:00:00 AM
Firstpage
125
Lastpage
126
Abstract
When transistors are operated at very low bias currents, excessive distortion is often produced by the changing emitter-base incremental resistance. A new configuration, characterized by an extremely low emitter resistance, which is independent of the output current, is proposed.
Keywords
Circuits; Transistors; circuits; transistors; Bandwidth; Circuits; Costs; Hearing aids; Impedance; Nonlinear distortion; Operational amplifiers; Power amplifiers; Silicon; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1970.1050088
Filename
1050088
Link To Document